New research aims to speed up MRAM in a future you’ll never live to see (probably)

A month after German researchers announced their latest breakthrough in MRAM design, physicists at Japan’s Tohoku University now say that it is possible to use an electric field to manipulate the magnetic domains in a semiconductor — eliminating moving magnets from MRAM completely. MRAM designed using the electric field method would be faster — and would use less energy — than earlier variations on the technology, thus making our lives easier and generally more awesome. Of course, none of this stuff actually exists yet, and it’s still got fierce competition from competing ideas (like IBM’s racetrack memory), so for now we’ll just have to stay content with the four 128k chips we scraped out of our old XT.

[Via MRAM Info]